The split output topology negates the limitations of the SiC MOSFET.

Unterhaching, Germany, 28th November 2013 – The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial as with SiC Schottky diodes. As the switching performance demands for new wide band-gap components increases, so do the requirements for the commutation process. The split output topology provides an additional tool to reduce turn-on losses and boost cross-conduction suppression. Installed at the module level it negates the limitations of the SiC MOSFET. The module behaves in inverter applications in the same way as in a boost circuit. This makes it possible to achieve better performance and efficiency than with a SiC JFET or SiC BJT – and enjoy the added advantage of MOSFET technology's simple gate drive circuit.

For more information please see Vincotech's article "SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior" under:
http://www.vincotech.com/en/support/technical-papers/fast-switching-active-pfc-with-power-modules/sic-mosfet-based-power-modules-utilizing-split-output.html?campaign_id=SiCMF

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For further information please contact:
Michael Frisch, Technical Marketing, Vincotech GmbH, michael.frisch[at]vincotech[dot]com, +49 89 878067-142
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